Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Abstract Developing Ohmic contact systems or achieving low resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX 2 N 4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni, Pd, Pt, Ti, and graphene) electrodes by using electronic structure calculations quantum transport simulations. It highlighted that stronger interlayer coupling allows CrC to form an n‐type Ti electrode in vertical direction. Furthermore, absence tunneling barrier at –Ti interface greatly improves electron injection efficiency. On other hand, studied metals Schottky lateral due Fermi level pinning (FLP) effects. Surprisingly, strong FLP effects restrict heights CrSi ‐metal contacts a narrow range. Where Ag, ideal ohmic directions, respectively, while quasi‐ohmic contact. exhibits highest performance as both FETs. The findings may provide fundamental understanding designing energy‐efficient FETs on .